Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

Article English OPEN
Ye Kyun Kim; Cheol Hyoun Ahn; Myeong Gu Yun; Sung Woon Cho; Won Jun Kang; Hyung Koun Cho;

In this paper, a simple and controllable "wet pulse annealing" technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 degrees C) by using scalable vacuum deposition is proposed. This method entai... View more
Share - Bookmark