State of the art of High Temperature Power Electronics

Conference object English OPEN
Buttay , Cyril; Planson , Dominique; ALLARD , Bruno; Bergogne , Dominique; Bevilacqua , Pascal; Joubert , Charles; Lazar , Mihai; Martin , Christian; Morel , Hervé; Tournier , Dominique; Raynaud , Christophe; (2009)
  • Publisher: HAL CCSD
  • Subject: [ SPI.OTHER ] Engineering Sciences [physics]/Other | High-temperature | Silicon carbide | Power electronics

International audience; High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500°C, whereas silicon is limited to 150-200°C.... View more
  • References (30)
    30 references, page 1 of 3

    [1] M. Consortium, “Project year 1 executive summary,” report, MOET FP6, sep 2007.

    [2] I. S. Mehdi, A. E. Brockschmidt, and K. K. J., “A case for high temperature electronics for aerospace,” in Proceedings of the High Temperature Electronics Conference (HiTEC), (Santa Fe, NM), IMAPS, may 2006.

    [3] J. G. Kassakian and D. J. Perreault, “The future of electronics in automobiles,” in Proceedings of the International Symposium on Power Semiconductor Devices and ICs (ISPSD), (Osaka, Japan), pp. 15-19, 2001.

    [4] L. D. Marlino, “High temperature & thermal management needs for the freedomcar program,” in Proceedings of the High Temperature Electronics Conference (HiTEC), (Santa Fe, NM), IMAPS, may 2006.

    [5] E. Kolawa, M. Mojarradi, and T. Balint, “Applications of high temperature electronics in space exploration,” in Proceedings of the High Temperature Electronics Conference (HiTEC), IMAPS, may 2006.

    [6] “Downhole gas compression,” product brochure, Corac Group plc, 2005.

    [7] B. W. Ohme, M. R. Larson, J. Riekels, S. Schlesinger, K. Vignarajah, and E. M. Nance, “Progress update on honeywell's deep trek high temperature electronics project,” in Proceedings of the High Temperature Electronics Conference (HiTEC), (Santa Fe), p. 9, IMAPS, may 2006.

    [8] B. J. Baliga, “The future of power semiconductor device technology,” Proceedings of the IEEE, vol. 89, pp. 822-832, jun 2001.

    [9] T. Funaki, J. C. Balda, J. Junghans, A. Jangwanitlert, S. Mounce, F. D. Barlow, H. A. Mantooth, T. Kimoto, and T. Hikihara, “Switching characteristics of sic jfet and schottky diode in high-temperature dc-dc power converters,” IEICE Electronics Express, vol. 2, pp. 97-102, feb 2005.

    [10] A. Ward, “Sic power diode reliability,” application note, CREE, 4600, Silicon Drive, Durham, NC, oct 2008.

  • Metrics
    No metrics available
Share - Bookmark