Dislocation core structures in Si-doped GaN

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Rhode, SL; Horton, MK; Fu, WY; Sahonta, S-L; Kappers, MJ; Pennycook, TJ; Humphreys, CJ; Dusane, RO; Moram, MA;
  • Publisher: Applied Physics Letters
  • Related identifiers: doi: 10.1063/1.4937457
  • Subject: 09 Engineering | Applied Physics | 02 Physical Sciences

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaNfilms with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 108 and (10 ± 1) ×... View more
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