Fabrication of p-type porous GaN on silicon and epitaxial GaN

Article English OPEN
Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, Dominique; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm;
  • Publisher: AMER INST PHYSICS
  • Journal: APPLIED PHYSICS LETTERS (issn: 0003-6951)
  • Publisher copyright policies & self-archiving
  • Related identifiers: doi: 10.1063/1.4821191
  • Subject: Films | Photoluminescence | Doping | Magnesium | Chemical-vapor-deposition | Gold | Vacancies | Mg-doped gan; yellow luminescence | Nanowires | Gallium nitride | Growth | Particles | III-V semiconductors | Epitaxy

Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic ... View more
Share - Bookmark