LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT

Article English OPEN
Murota , J.; Kato , M.; Kircher , R.; Ono , S.;
(1991)
  • Publisher: HAL CCSD
  • Related identifiers: doi: 10.1051/jp4:1991293
  • Subject: [ PHYS.HIST ] Physics [physics]/Physics archives

Low-temperature Si and Ge CVD processing was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 using an ultraclean hot-wall low-pressure CVD system. Epitaxial growth can be achieved on Si substrates at temperatures as low as 350 and 550°... View more
Share - Bookmark