LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT
Murota , J.; Kato , M.; Kircher , R.; Ono , S.;
- Publisher: HAL CCSD
Related identifiers: - Subject: [ PHYS.HIST ] Physics [physics]/Physics archives
Low-temperature Si and Ge CVD processing was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 using an ultraclean hot-wall low-pressure CVD system. Epitaxial growth can be achieved on Si substrates at temperatures as low as 350 and 550°... View more
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