Modeling boron profiles in silicon after pulsed excimer laser annealing

Article, Conference object English OPEN
Hackenberg M.; Huet K.; Negru R.; Venturini J.; Fisicaro G.; La Magna A.; Pichler P.;
  • Related identifiers: doi: 10.1063/1.4766533
  • Subject: adsorption | Technische Fakultät -ohne weitere Spezifikation- | laser thermal annealing | silicon | simulation | ion-beam mixing | boron | -
    • ddc: ddc:600

In this work, we investigated four possible mechanisms which were candidates to explain the shape of boron profiles after ion implantation and melting excimer laser annealing in silicon. A laser with a wavelength of 308 nm and a pulse duration of ~180 ns was used. To si... View more
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