Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

Article, Preprint English OPEN
Zhang, Kun ; Li, Huan-huan ; Grünberg, Peter ; Li, Qiang ; Ye, Sheng-tao ; Tian, Yu-feng ; Yan, Shi-shen ; Lin, Zhao-jun ; Kang, Shi-shou ; Chen, Yan-xue ; Liu, Guo-lei ; Mei, Liang-mo (2015)
  • Publisher: Nature Publishing Group
  • Journal: Scientific Reports, volume 5 (issn: 2045-2322, eissn: 2045-2322)
  • Related identifiers: pmc: PMC4585683, doi: 10.1038/srep14249
  • Subject: Condensed Matter - Mesoscale and Nanoscale Physics | Article

Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.
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