Silicon wafers for integrated circuit process

Article English OPEN
Leroy , B.;
(1986)
  • Publisher: HAL CCSD
  • Related identifiers: doi: 10.1051/rphysap:01986002108046700
  • Subject: substrate material | elemental semiconductors | semiconductor growth | silicon | integrated circuit process | crystal pulling procedures | reviews | thermal treatments | [ PHYS.HIST ] Physics [physics]/Physics archives | integrated circuit manufacture | crystal growth | quality

Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon... View more
  • References (75)
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