Simulations of planar pixel sensors for the ATLAS high luminosity upgrade

Conference object, Article English OPEN
Calderini, G.; Benoit, M.; Dinu, N.; Lounis, A.; Marchiori, G.;
(2009)
  • Publisher: Elsevier
  • Related identifiers: doi: 10.1016/j.nima.2010.04.082
  • Subject: Detectors and Experimental Techniques | Advanced infrastructures for detector R&D [9] | Silicon detectors | Radiation damage | Precision Pixel Detectors [9.3] | [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det] | Pixel detectors | [ PHYS.PHYS.PHYS-INS-DET ] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det] | Tracking
    arxiv: Physics::Instrumentation and Detectors
    acm: Hardware_INTEGRATEDCIRCUITS

International audience; A physics-based device simulation was used to study the charge carrier distribution and the electric field configuration inside simplified two-dimensional models for pixel layouts based on the ATLAS pixel sensor. In order to study the behavior of... View more
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