publication . Other literature type . Article . 2016

High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)

Richard Jaramillo Echeverría; D. Moya; Marcos Fernández García; Javier Gonzalez Sanchez; Michael Moll; Ivan Vila; Rogelio Palomo Pinto; Raúl Montero Santos;
Open Access English
  • Published: 01 May 2016
  • Country: Spain
This work was performed in the framework of the CERN-RD50 collaboration under the project RD50-2015-03. The project has received funding from the European Commission under the FP7 Research Infrastructures project AIDA, grant agreement no. 262025. This project has been partially supported by the Spanish Ministry of Economy and Competitiveness (MINECO) under grant number FPA2013-48387-C6-1-P.
free text keywords: XX, Transient current technique, High-voltage CMOS technology, Particle tracking pixel detectors, Two photon absorption, Optics, business.industry, business, Voltage, Two-photon absorption, Photon, Beam (structure), Doping, Physics, CMOS sensor, Two-photon excitation microscopy, Image resolution
Funded by
Advanced European Infrastructures for Detectors at Accelerators
  • Funder: European Commission (EC)
  • Project Code: 262025
  • Funding stream: FP7 | SP4 | INFRA
Any information missing or wrong?Report an Issue