FUNDAMENTAL TUNNELING PROCESSES IN MOSa SOLAR CELLS

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Balberg , I.; Hanak , J.; Weakliem , H.; Gal , E.; (1981)
  • Publisher: HAL CCSD
  • Related identifiers: doi: 10.1051/jphyscol:1981496
  • Subject: [ PHYS.HIST ] Physics [physics]/Physics archives
    arxiv: Condensed Matter::Materials Science | Condensed Matter::Superconductivity | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect

In previous studies of tunneling through a MOSa tunnel junction, where Sa was a-Si : H, it was shown that their characteristics resemble those of MOSc devices where Sc was crystalline silicon. In the present work we would like to report a demonstration of fundamental tu... View more
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