Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs

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Peng Cui; Yuanjie Lv; Chen Fu; Huan Liu; Aijie Cheng; Chongbiao Luan; Yang Zhou; Zhaojun Lin;

Abstract This research presents the first experimental observation of the enhancement of the polarization Coulomb field (PCF) scattering by aggressive lateral scaling of GaN HEMTs. By decreasing the source-drain distance to 300 nm through n +-GaN ohmic regrowth, 70-nm g... View more
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