Incorporation de Ge dans le 4H-SiC pendant la croissance homoépitaxiale par CVD

Article, Preprint English OPEN
Alassaad , Kassem; Soulière , Véronique; Cauwet , François; Peyre , Hervé; Carole , Davy; Kwasnicki , Pawel; Juillaguet , Sandrine; Kups , Thomas; Pezoldt , Jörg; Ferro , Gabriel;
(2014)
  • Publisher: Elsevier
  • Related identifiers: doi: 10.1016/j.actamat.2014.04.057
  • Subject: [ SPI.MAT ] Engineering Sciences [physics]/Materials | In situ | [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] | [CHIM.MATE]Chemical Sciences/Material chemistry | [SPI.TRON]Engineering Sciences [physics]/Electronics | [ SPI.TRON ] Engineering Sciences [physics]/Electronics | GeH4 | ALCHEMI | [ CHIM.MATE ] Chemical Sciences/Material chemistry | [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] | Condensed Matter - Materials Science | Ge incorporation | 4H-SiC

8 pages; International audience; In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with... View more
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