Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

Article English OPEN
Yu-Hsien Lin; Jay-Chi Chou;

This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has... View more
  • References (18)
    18 references, page 1 of 2

    Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., Hosono, H.. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature. 2004; 432 (7016): 488-492

    Kumomi, H., Nomura, K., Kamiya, T., Hosono, H.. Amorphous oxide channel TFTs. Thin Solid Films. 2008; 516 (7): 1516-1522

    Kamiya, T., Nomura, K., Hosono, H.. Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping. Journal of Display Technology. 2009; 5 (7): 273-288

    Takagi, A., Nomura, K., Ohta, H., Yanagi, H., Kamiya, T., Hirano, M., Hosono, H.. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4. Thin Solid Films. 2005; 486 (1-2): 38-41

    Chiu, C. J., Pei, Z. W., Chang, S. P., Chang, S. J.. Influence of weight ratio of poly(4-vinylphenol) insulator on electronic properties of InGaZnO thin-film transistor. Journal of Nanomaterials. 2012; 2012-7

    Nomura, K., Takagi, A., Kamiya, T., Ohta, H., Hirano, M., Hosono, H.. Amorphous oxide semiconductors for high-performance flexible thin-film transistors. Japanese Journal of Applied Physics. 2006; 45 (5): 4303-4308

    Hosono, H.. Ionic amorphous oxide semiconductors: material design, carrier transport, and device application. Journal of Non-Crystalline Solids. 2006; 352 (9–20): 851-858

    Iwasaki, T., Itagaki, N., Den, T., Kumomi, H., Nomura, K., Kamiya, T., Hosono, H.. Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: an application to amorphous oxide semiconductors in In-Ga-Zn-O system. Applied Physics Letters. 2007; 90 (24)

    Wang, Y., Liu, S. W., Sun, X. W., Zhao, J. L., Goh, G. K. L., Vu, Q. V., Yu, H. Y.. Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors. Journal of Sol-Gel Science and Technology. 2010; 55 (3): 322-327

    Lee, B. H., Kang, L., Nieh, R., Qi, W., Lee, J. C.. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing. Applied Physics Letters. 2000; 76 (14): 1926-1928

  • Metrics
Share - Bookmark