Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

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Yu-Hsien Lin; Jay-Chi Chou;
(2014)

This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has... View more
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