Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

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Lin, Yu-Hsien; Chou, Jay-Chi;
  • Publisher: Hindawi Publishing Corporation
  • Journal: Journal of Nanomaterials (issn: 1687-4110, eissn: 1687-4129)
  • Related identifiers: doi: 10.1155/2014/347858
  • Subject: Technology (General) | T1-995 | Article Subject

This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has... View more
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