publication . Article . 2013

3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

Christopher John Kenney; Cinzia Da Via; S. Watts; A. Micelli; Sebastian Grinstein; Elisa Vianello; Gabriele Giacomini; Celeste Fleta; Giulio Pellegrini; Philippe Grenier; ...
Open Access
  • Published: 01 Jan 2013 Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, volume 699, pages 18-21 (issn: 0168-9002, Copyright policy)
  • Publisher: Elsevier BV
Abstract 3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scen...
free text keywords: Nuclear and High Energy Physics, Instrumentation, Silicon, chemistry.chemical_element, chemistry, Planar, Quality assurance, business.industry, business, ATLAS experiment, Pixel, Surface micromachining, Physics, Aperture, Radiation hardening, Computer hardware
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