On wafer silicon integrated noise source characterization up to 110 GHz based on germanium-on-silicon photodiode

Conference object English OPEN
Oeuvrard , Sandrine; Lampin , Jean-François; Ducournau , Guillaume; Lepilliet , Sylvie; Danneville , François; Quemerais , Thomas; Gloria , Daniel;
  • Publisher: HAL CCSD
  • Related identifiers: doi: 10.1109/ICMTS.2014.6841484
  • Subject: wire bonding | noise parameters extraction | optoelectronics bench | ENR | noise source | Ge-on-Si photodiode

In this work, a new concept of photonic noise source has been developed and characterized, based on Germanium-on-Silicon high speed photodiode (GeHSPD). This photodiode RF output power has been preliminary characterized up to 210 GHz, using a dedicated optoelectronic be... View more
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