publication . Article . Other literature type . 2019

Incorporation of Europium into GaN Nanowires by Ion Implantation

Faye, D. Nd.; Biquard, X.; Nogales, E.; Felizardo, M.; Peres, M.; Redondo-Cubero, A.; Auzelle, T.; Daudin, B.; Tizei, L. H. G.; Kociak, M.; ...
Closed Access English
  • Published: 26 Apr 2019
Abstract
International audience; Rare earth (RE)-doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility, and small dimension of the NW host, are promising building blocks for future nanoscale devices in optoelectronics and quantum technologies. Europium doping of GaN NWs was performed by ion implantation, and structural and optical properties were assessed in comparison to thin film reference samples. Despite some surface degradation for high implantation fluences, the NW core remains of high crystalline quality with lower concentrations of extended defects than obs...
Subjects
free text keywords: [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Física de materiales, Física del estado sólido, General Energy, Physical and Theoretical Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Ion implantation, Ion, Europium, chemistry.chemical_element, chemistry, Thin film, Crystal, Annealing (metallurgy), Optoelectronics, business.industry, business, Inorganic chemistry, Nanowire, Doping
Funded by
EC| ESTEEM 2
Project
ESTEEM 2
Enabling Science and Technology through European Electron Microscopy
  • Funder: European Commission (EC)
  • Project Code: 312483
  • Funding stream: FP7 | SP4 | INFRA
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publication . Article . Other literature type . 2019

Incorporation of Europium into GaN Nanowires by Ion Implantation

Faye, D. Nd.; Biquard, X.; Nogales, E.; Felizardo, M.; Peres, M.; Redondo-Cubero, A.; Auzelle, T.; Daudin, B.; Tizei, L. H. G.; Kociak, M.; ...