Effects of Neglecting Carrier Tunneling on Electrostatic Potential in Calculating Direct Tunneling Gate Current in Deep Submicron MOSFETs

Article English OPEN
Hakim, MMA; Haque, A;
(2002)
  • Identifiers: doi: 10.1109/TED.2002.802650
  • Subject:
    arxiv: Computer Science::Hardware Architecture | Condensed Matter::Superconductivity | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect | Computer Science::Emerging Technologies

We investigate the validity of the assumption of neglecting carrier tunneling effects on self-consistent electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs. Comparison between simulated and experimental results shows that for ... View more
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