AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

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Wojtasiak, Wojciech; Góralczyk, Marcin; Gryglewski, Daniel; Zając, Marcin; Kucharski, Robert; Prystawko, Paweł; Piotrowska, Anna; Ekielski, Marek; Kamińska, Eliana; Taube, Andrzej; Wzorek, Marek;
(2018)
  • Publisher: Multidisciplinary Digital Publishing Institute
  • Journal: Micromachines,volume 9,issue 11 (issn: 2072-666X, eissn: 2072-666X)
  • Publisher copyright policies & self-archiving
  • Related identifiers: doi: 10.3390/mi9110546, pmc: PMC6266852
  • Subject: ohmic contact | Mechanical engineering and machinery | power amplifier | high electron mobility transistor (HEMT) | regrown contact | ammonothermal GaN | high electron mobility transistors | TJ1-1570 | AlGaN/GaN | Article

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) ... View more
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