Optimization of FIBMOS Through 2D Silvaco ATLAS and 2D Monte Carlo Particle-based Device Simulations

Article English OPEN
J. Kang; X. He; D. Vasileska; D. K. Schroder;
(2001)
  • Publisher: Hindawi Publishing Corporation
  • Journal: VLSI Design (issn: 1065-514X, eissn: 1563-5171)
  • Publisher copyright policies & self-archiving
  • Related identifiers: doi: 10.1155/2001/45747
  • Subject: Hot carrier reliability. | Electronic computers. Computer science | Device scaling | Channel engineering | Threshold voltage characterization | QA75.5-76.95 | FIBMOS devices

Focused Ion Beam MOSFETs (FIBMOS) demonstrate large enhancements in core device performance areas such as output resistance, hot electron reliability and voltage stability upon channel length or drain voltage variation. In this work, we describe an optimization ... View more
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