Optimization of FIBMOS Through 2D Silvaco ATLAS and 2D Monte Carlo Particle-based Device Simulations
Schroder, D. K.
- Publisher: Hindawi Publishing Corporation
(issn: 1065-514X, eissn: 1563-5171)
Hot carrier reliability. | Electronic computers. Computer science | Device scaling | Channel engineering | Threshold voltage characterization | QA75.5-76.95 | FIBMOS devices
Focused Ion Beam MOSFETs (FIBMOS) demonstrate large enhancements in core device
performance areas such as output resistance, hot electron reliability and voltage stability
upon channel length or drain voltage variation. In this work, we describe an optimization
technique for FIBMOS threshold voltage characterization using the 2D Silvaco ATLAS
simulator. Both ATLAS and 2D Monte Carlo particle-based simulations were used to
show that FIBMOS devices exhibit enhanced current drive capabilities when compared to
normal MOSFETs. It was also found that the device performance is very much dependent
upon the FIB implant profile. High and narrow doping of the FIB implant leads to high
drain current and low hot carrier reliability, whereas low and wide doping gives rise to
lower drain current and higher hot carrier reliability.