Gold nanoparticle-pentacene memory-transistors

Preprint English OPEN
Novembre , Christophe ; Guerin , David ; Lmimouni , Kamal ; Gamrat , Christian ; Vuillaume , Dominique (2008)
  • Publisher: HAL CCSD
  • Related identifiers: doi: 10.1063/1.2896602
  • Subject: Condensed Matter - Materials Science | [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off states (less than a factor 2). Charge retention times up to 4500 s are observed. The memory effect is mainly attributed to the Au nanoparticles.
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