publication . Article . Preprint . 2012

Novel Silicon n-in-p Pixel Sensors for the future ATLAS Upgrades

H. Pernegger; R. Richter; A. La Rosa; R. Nisius; C. Gallrapp; Anna Macchiolo; Philipp Weigell;
Open Access English
  • Published: 23 May 2012
  • Publisher: Nucl. Instrum. Methods Phys. Res., A
In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the Inner Detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10^16 1-MeV n_eq/cm^2, and prove the operability of this kind of sensors in the harsh ra...
arXiv: Physics::Instrumentation and Detectors
free text keywords: Detectors and Experimental Techniques, Advanced infrastructures for detector R&D [9], Precision Pixel Detectors [9.3], Nuclear and High Energy Physics, Instrumentation, Physics - Instrumentation and Detectors, Cost effectiveness, Optoelectronics, business.industry, business, Chip, Detector, Radiation hardening, ATLAS experiment, Physics, Pixel, Upgrade, Planar

[1] I. Peric et al., Nucl. Instr. and Meth. A565 (2006) 178. [2] ATLAS Collaboration, JINST3, P07007 (2008). [3] Ch. Gallrapp et al., Nucl. Instr. and Meth. A679 (2012) 29. [4] S. Altenheiner et al., Nucl. Instr. and Meth. A678 (2011) 25. [5] M. Garcia-Sciveres et al., Nucl. Instr. and Meth A636 (2010) S155.

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