Germanium epitaxy on silicon

Article English OPEN
Ye, Hui; Yu, Jinzhong;
  • Publisher: Taylor & Francis Group
  • Journal: Science and Technology of Advanced Materials,volume 15,issue 2 (issn: 1468-6996, eissn: 1878-5514)
  • Publisher copyright policies & self-archiving
  • Related identifiers: pmc: PMC5090408, doi: 10.1088/1468-6996/15/2/024601
  • Subject: TA401-492 | Biotechnology | germanium quantum dots | self assembly | strain modification | germanium films | Materials of engineering and construction. Mechanics of materials | Focus Articles | epitaxial growth | TP248.13-248.65
    arxiv: Condensed Matter::Materials Science | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect | Physics::Optics

With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and co... View more
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