publication . Preprint . Other literature type . Article . 2012

Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC

Anna Macchiolo; Stefano Terzo; R. Nisius; M. A. Ellenburg; Ladislav Andricek; H. G. Moser; Philipp Weigell; R. Richter;
Open Access English
  • Published: 30 Oct 2012
Abstract
The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with an active thickness of 75 um or 150 um, produced at the MPI Semiconductor Laboratory (MPI HLL) and on 100 um thick sensors with active edge...
Subjects
free text keywords: Physics - Instrumentation and Detectors, Detectors and Experimental Techniques, Nuclear and High Energy Physics, Instrumentation, Beam (structure), Semiconductor, business.industry, business, Physics, Wire bonding, Large Hadron Collider, Chip, Optoelectronics, Cantilever, Pixel, Interconnection
Related Organizations

[1] C. Gallrapp et al., “Performance of novel silicon n-in-p planar pixel sensors”, NIM A, Vol. 679 (2012) 29.

[2] A. La Rosa et al., “Novel Silicon n-in-p pixel Sensors for the future ATLAS Upgrades”, NIM A, (2012) in press, arXiv:1205.5305

[3] P. Weigell ”Recent Results of the ATLAS Upgrade Planar Pixel Sensors R&D Project”, these proceedings.

[4] L. Andricek et al., IEEE Trans. Nucl. Sci., Vol. 51, No. 3. (2004), 1117.

[5] A. Macchiolo et al., SLID-ICV Vertical Integration Technology for the ATLAS Pixel Upgrades, Physics Procedia, Volume 37, 2012, Pages 1009- 1015 [OpenAIRE]

[6] L. Andricek et al, Development of thin sensors and of a new interconnection technology for the upgrade of the ATLAS pixel system, Nucl. Instrum. Meth. A 636 (2011) 68.

[7] A. Macchiolo et al, Performance of thin pixel sensors irradiated up to a fluence of 1016 neq cm 2 and development of a new interconnection technology for the upgrade of the ATLAS pixel system, Nucl. Instrum. Meth. A 650 (2011) 145.

[8] P. Weigell et al., “Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2 1015 neq=cm2”, JINST, Vol. 6 (2011), C12049

[9] J. Große-Knetter et al., USBpix - USB based readout system for ATLAS FE-I3 and FE-I4, 3309 http://icwiki.physik.unibonn.de/twiki/bin/view/Systems/UsbPix.

[10] H. Bichsel, Straggling in thin silicon detectors, Rev. Mod. Phys. 60 (1988) 663. [OpenAIRE]

[11] M. Garcia-Sciveres et al., The FE-I4 pixel readout integrated circuit, 353 NIM A, Vol. 636, No. 1 Supplement (2011), S155

[12] The ATLAS IBL Collaboration ”Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip”, http://arxiv.org/abs/1209.1906

[13] J. Weingarten et al.,”Planar Pixel Sensors for the ATLAS Upgrade: Beam Tests results”, accepted by JINST, http://arxiv.org/abs/arXiv:1204.1266

[14] J. Kalliopuska et al.,”Results of a Multi Project Wafer Process of Edgeless Silicon Pixel Detectors”, these proceedings.

[15] S. Era¨nen et al., Nucl. Instrum. Meth. A 607 (2009) 85-88.

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