publication . Preprint . Article . 2013

Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

Stefano Terzo; Ladislav Andricek; Anna Macchiolo; Philipp Weigell; R. Richter; R. Nisius; H. G. Moser;
Open Access English
  • Published: 18 Oct 2013
Comment: 6 pages, 13 figures, submitted to Nuclear Instruments and Method A as proceedings of the 9th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors
free text keywords: Physics - Instrumentation and Detectors, Detectors and Experimental Techniques, Microelectronics and interconnection technology [3], 3D Interconnection [3.2], Nuclear and High Energy Physics, Instrumentation, Wire bonding, Cantilever, Chip, Optoelectronics, business.industry, business, Pixel, Soldering, Large Hadron Collider, Upgrade, DESY, Physics
Related Organizations

[1] O. Bru¨ning, L. Rossi, et al., ”High-Luminosity Large Hadron Collider; A description for the European Strategy Preparatory Group”, Tech. Rep. CERN-ATS-2012-236, CERN (Geneva, 2012).

[2] M. Capeans et al., ATLAS Insertable B-Layer Technical Design Report, CERN-LHCC-2010-013, Geneva Sep. 2010.

[3] S. Terzo et al., ”Heavily irradiated n-in-p thin planar pixel sensors with and without active edges”, Proceedings of the iWoRID 2013 Conference, to be published in JINST.

[4] A. Macchiolo et al., ”Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC”, Proceedings for Pixel 2012 Conference, Nucl. Instr. and Meth. A, in press,

[5] I. Peric et al., ”The FEI3 readout chip for the ATLAS pixel detector”, Nucl. Instr. and Meth. A565 (2006) 178.

[6] M. Garcia-Sciveres et al., ”The FE-I4 pixel readout integrated circuit”, Nucl. Instr. and Meth. A636, No. 1 Supplement (2011), S155.

[7] Philipp Weigell on behalf of the ATLAS Planar Pixel Sensors R&D Project, ”Recent results of the ATLAS upgrade planar pixel sensors R&D project”, Proceedings for Pixel 2012 Conference, Nucl. Instr. and Meth. A, in press,

[8] S. Eranen et al., ”3D processing on 6 in. high resistive SOI wafers: Fabrication of edgeless strip and pixel detectors”, Nucl. Instr. and Meth. A607 (2009) 85. [OpenAIRE]

[9] X Wu et al., ”Recent advances in processing and characterization of edgeless detectors”, JINST 7 (2012), 0221/7/02/C02001.

[10] J.Weingarten, et al., ”Planar Pixel Sensors for the ATLAS Upgrade: Beam Tests results”, accepted by JINST,

[11] P.Weigell, ”Investigation of Properties of Novel Silicon Pixel Assemblies Employing Thin n-in-p Sensors and 3D-Integration”, PhD Thesis, (2013), TU Munchen CERN-THESIS-2012-229. [OpenAIRE]


[13] ATLAS IBL Collaboration, ”Prototype ATLAS IBL Modules using the FEI4A Front-End Readout Chip”, JINST 7, (2012), P11010.

[14] M. Bomben et al., Nucl. Instr. and Meth. A 712 (2013) 41.

[15] A. Klumpp et al., ”3D-Integration of Silicon Devices: A Key Technology for Sophisticated Products” in ”Design, Automation Test in Europe Conference Exhibition”, pp. 1678-1683, 2010. [OpenAIRE]

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