Restricted-access al-mediated material transport in al contacting of pureGaB Ge-on-Si p+n diodes

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Sammak, Amir; Qi, Lin; Nanver, Lis Karen;
  • Publisher: Springer Nature
  • Journal: Journal of Electronic Materials4,676-4,683 (issn: 0361-5235)
  • Related identifiers: doi: 10.1007/s11664-015-4008-x
  • Subject: Al-induced material mediation | METIS-314998 | Pure Bpure GaGe-on-SiGe diodesphotodiodesAl-induced material mediation | Ge diodes | Ge-on-Si | Condensed Matter Physics | photodiodes | pure Ga | Electrical and Electronic Engineering | Materials Chemistry | IR-98248 | Electronic, Optical and Magnetic Materials | Pure B | EWI-26408

The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance win... View more
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