Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p + n Diodes

Article English OPEN
Sammak, Amir; Qi, Lin; Nanver, Lis Karen;
(2015)
  • Publisher: Springer Nature
  • Journal: Journal of Electronic Materials,volume 44,issue 12,pages4,676-4,683 (issn: 0361-5235)
  • Publisher copyright policies & self-archiving
  • Related identifiers: doi: 10.1007/s11664-015-4008-x
  • Subject: Al-induced material mediation | METIS-314998 | Pure Bpure GaGe-on-SiGe diodesphotodiodesAl-induced material mediation | Al-induced | Ge diodes | Ge-on-Si | Condensed Matter Physics | photodiodes | pure Ga | IR-98248 | Electrical and Electronic Engineering | Materials Chemistry | Electronic, Optical and Magnetic Materials | Pure B | material mediation | EWI-26408

The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance win... View more
Share - Bookmark