Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes
- Publisher: Springer
Journal of Electronic Materials
Condensed Matter Physics | Electrical and Electronic Engineering | Materials Chemistry | Electronic, Optical and Magnetic Materials
The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance win...