Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes

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Sammak, A. ; Qi, L. ; Nanver, L.K. (2015)
  • Publisher: Springer
  • Journal: Journal of Electronic Materials 4,676-4,683 (issn: 0361-5235)
  • Related identifiers: doi: 10.1007/s11664-015-4008-x
  • Subject: Condensed Matter Physics | Electrical and Electronic Engineering | Materials Chemistry | Electronic, Optical and Magnetic Materials

The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance win... View more
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