AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

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P. C. Chang; K. H. Lee; Z. H. Wang; S. J. Chang;

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design.... View more
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