AlGaN/GaN High Electron Mobility Transistors with Multi-/GaN Buffer

Article English OPEN
P. C. Chang; K. H. Lee; Z. H. Wang; S. J. Chang;
(2014)
  • Publisher: Hindawi Limited
  • Journal: Journal of Nanomaterials (issn: 1687-4110, eissn: 1687-4129)
  • Related identifiers: doi: 10.1155/2014/623043
  • Subject: Technology (General) | T1-995 | Article Subject
    acm: Hardware_INTEGRATEDCIRCUITS | Hardware_PERFORMANCEANDRELIABILITY

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design.... View more
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