Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

Article English OPEN
Alassaad , K.; Vivona , M.; Soulière , V.; Doisneau , B.; Cauwet , F.; Chaussende , D.; Giannazzo , F.; Roccaforte , F.; Ferro , Gabriel;
  • Publisher: HAL CCSD
  • Related identifiers: doi: 10.1149/2.0121408jss
  • Subject: [CHIM.MATE]Chemical Sciences/Material chemistry | [ SPI.MAT ] Engineering Sciences [physics]/Materials | [ CHIM.MATE ] Chemical Sciences/Material chemistry | [SPI.MAT]Engineering Sciences [physics]/Materials

International audience; In this work, we report on the effect of adding GeH4 during 3C-SiC heteroepitaxial growth on low off-axis 4H-SiC substrate using chemical vapor deposition technique. When added together with SiH4 and C3H8, GeH4 does not significantly modify the 3... View more
Share - Bookmark