Spintronic materials and devices based on antiferromagnetic metals

Article English OPEN
Y.Y. Wang; C. Song; J.Y. Zhang; F. Pan;
  • Publisher: Elsevier BV
  • Journal: Progress in Natural Science: Materials International (issn: 1002-0071)
  • Publisher copyright policies & self-archiving
  • Related identifiers: doi: 10.1016/j.pnsc.2017.03.008
  • Subject: TA401-492 | Spintronics | General | Materials of engineering and construction. Mechanics of materials | Electrical manipulation | Antiferromagnetic metals | Tunneling anisotropic magnetoresistance
    arxiv: Condensed Matter::Strongly Correlated Electrons | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect

In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magne... View more
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