Positron Studies of Oxide-Semiconductor Structures

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Uedono , A.; Wei , L.; Kawano , T.; Tanigawa , S.; Suzuki , R.; Ohgaki , H.; Mikado , T.;
(1995)
  • Publisher: HAL CCSD
  • Related identifiers: doi: 10.1051/jp4:1995105
  • Subject: [ PHYS.HIST ] Physics [physics]/Physics archives
    arxiv: Physics::Optics | Physics::Accelerator Physics | Condensed Matter::Materials Science | Computer Science::Other

The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of incident pos... View more
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