InAs quantum wires on InP substrate for VCSEL applications

Conference object English OPEN
Lamy , Jean-Michel ; Paranthoën , Cyril ; Levallois , Christophe ; Nakkar , Abdulhadi ; Folliot , Hervé ; Dehaese , Olivier ; Le Corre , Alain ; Loualiche , Slimane ; Castany , Olivier ; DUPONT , Laurent (2008)
  • Publisher: HAL CCSD
  • Related identifiers: doi: 10.1109/ICIPRM.2008.4703028
  • Subject: [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic
    arxiv: Physics::Optics | Condensed Matter::Materials Science

International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL laser polarization appears stable on the whole sample and with excitation, no switching is observed. Its polarization is mainly oriented along [1-10], an extinction coefficient of 30 dB is measured. Those preliminary results demonstrate the interests of quantum dashes in the realization of controlled and stable polarization VCSEL devices
  • References (13)
    13 references, page 1 of 2

    Sukanta, “High volume production of single mode VCSEL” Proc. SPIE, vol 6132, 613202, 2006.

    [2] C. J. Chang-Hasnain, J. Harbison, L. T. Florez and N. G. Stoffel, “Polarization characteristics of quantum well vertical cavity surface emitting lasers”, Electron. Lett., vol 27, pp 163-165, 1991.

    Kurokawa and C. Amano, “Investigations of data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates”, Electron. Lett., vol 35, pp 45-46, 1999.

    [4] J. M. Ostermann, P. Debernardi and R. Michalzik, “Surface grating VCSELs with dynamically stable output polarization”, IEEE Photon. Technol. Lett., vol 17, pp 2505-2057, 2005.

    [5] K. D. Choquette and R. E. Leibenguth, “Control of vertical cavity laser operation with anisotropic transverse cavity geometries”, IEEE Photon. Technol. Lett., vol 6 , pp 40-42, 1994.

    [6] S. Bandyopadhyay, Y. Hong, P. S. Spencer, and K. A. Shore, “VCSEL polarization control by optical injection”, J. Lightwave. Technol, vol 21, pp 2395-2404, 2003.

    [7] Y.L. Okuno, J. Geske, K.G. Gan, Y.J. Chiu, S.P. DenBaars and J.E. Bowers, Appl. Phys. Lett,., vol 82, pp 2377-2379, 2003.

    [8] Y. Ohno, S. Shimomura, S. Hiyamizu, Y. Takasuka, M. Ogura, K. Komori, “Polarization control of vertical cavity surface emitting laser structure by using self-organized quantum wires grown on (775)B oriented GaAs substrate by molecualr beam epitaxy”, J. Vac. Sci. Technol. B, vol 22, pp 1526-1528, 2004.

    [9] J. P. Reithmaier, A. Somers, S. Deubert, R. Schwertberger, W. Kaiser, A. Forchel, M. Calligaro, P. Resneau, O. Parillaud, S. Bansropun, M. Krakowski, R. ALizin, D. Hadass, A. Bilenca, H. Dery, V. Milhelashvili, G. Eisenstein, M. Gioannini, I. Montrosset, T. W. Berg, M. van der Poel, J. Mork and B. Tromborg, “Inp based lasers and optical amplifiers with wire/dot like active regions”, J. Phys. D, vol 38, pp 2088-2102, 2005.

    [10] Z. C. Lin, C. Y. Lu, C. P. Lee, “Self-assembled InAs quantum wires lasers”, Semicond. Sci. Technol., vol 21, pp 1221-1223, 2006.

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