publication . Other literature type . Conference object . 2015

1.55-Μm Dilute Nitride Soas With Low Temperature Sensitivity For Coolerless On-Chip Operation

Giannis Giannoulis; Nikos Iliadis; Dimitrios Apostolopoulos; Paraskevas Bakopoulos; Ville-Markus Korpijärvi; Jaakko Mäkelä; Jukka Viheriälä; Mircea Guina; Hercules Avramopoulos;
Open Access
  • Published: 09 Dec 2015
  • Publisher: Zenodo
The temperature dependence of GaAs and InP SOA materials is investigated experimentally in this work. The direct comparison study verified that Dilute Nitrides are less temperature sensitive showing enhanced thermal stability on ASE spectrum and gain measurements in CW mode. Wavelength Conversion experiment at 10 Gb/s verified that GaAs SOA keeps up with the fast gain dynamics and the proper data processing at elevated temperatures while the performance of InP material is drastically degraded by heating the SOA device.
free text keywords: Semiconductor Optical Amplifier (SOA), Photonic Integration, Wavelength Conversion, Passive Optical Network (PON)
Funded by
eNd to End scalable and dynamically reconfigurable oPtical arcHitecture for application-awarE SDN cLoud datacentErs
  • Funder: European Commission (EC)
  • Project Code: 645212
  • Funding stream: H2020 | RIA
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Other literature type . 2015
Provider: Datacite
Conference object . 2015
Provider: ZENODO
Other literature type . 2016
Provider: Datacite
Conference object . 2015
Provider: OpenAIRE
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