Epitaxial growth of dilute nitride-arsenide compound semiconductors by molecular beam epitaxy

Other literature type en UNKNOWN
Adamcyk, Martin;
(2002)

In[sub y]Ga[sub 1-y]As[sub1-x]N[sub x] containing a small amount of nitrogen (x<0.05) is a new narrow bandgap semiconductor alloy that has advantageous properties for the fabrication of optoelectronic devices. In this thesis, we seek to improve the material quality... View more
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