The optical characterization of indium(y) gallium(1-y) arsenic(1-x) nitrogen(x)

Other literature type en UNKNOWN
Ramsey, Jamie Leigh;
  • Publisher: Université d'Ottawa / University of Ottawa
  • Embargo end date: 2013-11-07
  • Identifiers: doi: 10.20381/ruor-9624

The dilute Nitride materials, InGaAsN, are studied as promising candidates for optical devices in the telecommunications wavelength range between 1.3 and 1.55mum. Such materials can be grown lattice matched to a GaAs substrate and could remove the need to work with stru... View more
Share - Bookmark