Experimentally Defined Electronic Properties of InGaAsN: Input for Solar Cell Simulations

Other literature type English UNKNOWN
Lebedeva, N.; Repo, P.; Yli-Koski, M.; Savin, H.; Aho, A.; Tukiainen, A.; Guina, M.; Tallián, M.; Savtchouk, S.;
(2011)

We have studied the electronic properties of MBE-grown non-doped InGaAsN layers, lattice matched to GaAs, with different nitrogen content. Our main emphasis is on the material characterization and especially on testing the potential of Surface Photovoltage (SPV) m... View more
Share - Bookmark

  • Download from
  • Cite this publication