Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

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Brown, A.R.; Asenov, A.; Watling, J.R.;
(2002)

We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed "atomistic" drift-diffusion simulation approach includes quantum correction... View more
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