RTS amplitudes in decananometer MOSFETs: 3-D simulation study

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Asenov, A.; Balasubramaniam, R.; Brown, A.R.; Davies, J.H.;

In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO/sub 2/ interface of sub-100-nm (decananometer) MOSFETs employing three-dimensional (3-D) "atomistic" simulations. Bot... View more
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