publication . Thesis . 2014

Computer simulation of electromigration in microelectronics interconnect

Zhu, Xiaoxin;
Open Access English
  • Published: 01 Jul 2014
  • Country: United Kingdom
Abstract
Electromigration (EM) is a phenomenon that occurs in metal conductor carrying high density electric current. EM causes voids and hillocks that may lead to open or short circuits in electronic devices. Avoiding these failures therefore is a major challenge in semiconductor device and packaging design and manufacturing, and it will become an even greater challenge for the semiconductor assembly and packaging industry as electronics components and interconnects get smaller and smaller. According to the assembly and packaging section of the International Technology Roadmap for Semiconductor (ITRS) developed in 2007 and 2009 [1] [2], EM was a near term threat for the...
Subjects
ACM Computing Classification System: ComputerApplications_COMPUTERSINOTHERSYSTEMS
free text keywords: QA
Related Organizations
120 references, page 1 of 8

Chapter 1 INTRODUCTION............................................................................................................................ 1 1.1 Electromigration and Microelectronics Reliability........................................................................ 1 1.2 Electronic Packaging and Its Trend ............................................................................................... 3 1.3 Aims and Objectives of This Research .......................................................................................... 9 2.1.2 The Thermomigration Phenomenon ................................................................................... 14 2.1.5 The Effects of Interfacial Chemical Reactions ...................................................................... 16 [1] [2] [3] [4] [5] [6] [7] [8] [9] A. a. p. section, "the International Technology Roadmap for Semiconductor (ITRS)," 2007.

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