Effect of hydrogen in dilute InNxSb1–x alloys grown by molecular beam epitaxy

Article English OPEN
Veal, T. D. (Tim D.); Mahboob, I.; McConville, C. F. (Chris F.); Burke, T. M.; Ashley, T.;
  • Publisher: American Institute of Physics
  • Identifiers: doi: 10.1063/1.1604463
  • Subject: QC | TK
    arxiv: Condensed Matter::Materials Science
    mesheuropmc: technology, industry, and agriculture

The electronic properties and nitrogen bonding configurations are investigated in dilute InNxSb1–x alloys grown by molecular beam epitaxy using a mixed nitrogen and hydrogen plasma. High-resolution electron-energy-loss spectroscopy is used to observe annealing-induced c... View more
  • References (16)
    16 references, page 1 of 2

    1 I. A. Buyanova, W. M. Chen, and B. Monemar, MRS Internet J. Nitride Semicond. Res. 2, 2 ~2001!.

    2 M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 2 35, 1273 ~1996!.

    3 T. Ashley, T. M. Burke, G. J. Pryce, A. R. Adams, A. Andreev, B. N. Murdin, E. P. O'Reilly, and C. R. Pidgeon, Solid-State Electron. 47, 387 ~2003!.

    4 A. D. Johnson, R. H. Bennett, J. Newey, G. J. Pryce, G. M. Williams, and T. M. Burke, Mater. Res. Soc. Symp. Proc. 607, 23 ~2000!.

    5 B. N. Murdin, M. Kamal-Saadi, A. Lindsay, E. P. O'Reilly, A. R. Adams, G. J. Nott, J. G. Crowder, C. R. Pidgeon, I. V. Bradley, J.-P. R. Wells, T. Burke, A. D. Johnson, and T. Ashley, Appl. Phys. Lett. 78, 1568 ~2001!.

    6 B. N. Murdin, A. R. Adams, P. Murzyn, C. R. Pidgeon, I. V. Bradley, J.-P. R. Wells, Y. H. Matsuda, N. Miura, T. Burke, and A. D. Johnson, Appl. Phys. Lett. 81, 256 ~2002!.

    7 J.-D. Hecht, F. Frost, D. Hirsch, H. Neumann, A. Schindler, A. B. Preobrajenski, and T. Chasse´, J. Appl. Phys. 90, 6066 ~2001!.

    8 J.-P. Zhang, D.-Z. Sun, X.-L. Wang, M.-Y. Kong, Y.-P. Zeng, J.-M. Li, and L.-Y. Lin, Semicond. Sci. Technol. 14, 403 ~1999!.

    9 H. Liu, D. C. Bertolet, and J. W. Rogers, Jr., Surf. Sci. 320, 145 ~1994!.

    10 H. Ma, Y. Berthier, and P. Marcus, Appl. Surf. Sci. 153, 40 ~1999!.

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