Design, simulation and analysis of RESURF Si/SiC power LDMOSFETs

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Chan, Chun Wa;
  • Subject: TK

It is necessary for power laterally diffused MOSFETs (LDMOSFETs) to operate efficiently and reliably in high temperature (<300 ⁰C), hostile environments such as those found in downhole, space, automotive and aerospace applications. Currently, silicon-oninsulator (SOI) t... View more
  • References (17)
    17 references, page 1 of 2

    The Si seed wafer is treated with Smart CutTM process. ...............................................145 Figure C.3. SEM images of the Si/SiC samples in high angle (top), of top view (middle) and side view (bottom)..................................................................................................147 Figure C.4. (a) 100mm Si/SiC bonded wafers with a (1) 1-μm, (2) 2-μm or (3) 5-μm-thick Si film, as well as TEM views of the Si/SiC interfaces, showing (1) no interfacial layer, (2)&(3) presence of an amorphous layer and (4) an island-like defect, respectively [156] .......................................................................................................................................148 Figure C.5. A cross-sectional view of a 4H-SiC lateral JFET on a (SI) SiC substrate, able to block voltage up to 3500 V [170] .............................................................................150 1. P. M. Gammon and C. W. Chan, (WO2016132089) Power Semiconductor Device, 2015. Filed, USA and UK, International Application No.: PCT/GB2015/050467.

    Link: https://patentscope.wipo.int/search/en/detail.jsf?docId=WO2016132089 1. C. W. Chan, F. Li, A. Sanchez, P. A. Mawby and P. M. Gammon, "Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modelling," in IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3713-3718, Sept. 2017.

    2. C. W. Chan, P. A. Mawby and P. M. Gammon, "Analysis of Linear-Doped Si/SiC Power LDMOSFETs Based on Device Simulation," in IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2442-2448, June 2016.

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