Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy

Article English OPEN
Sobiesierski, Zbigniew; Clark, S. A.; Williams, R. H.; Tabata, A.; Benyattou, T.; Guillot, G.; Gendry, M.; Hollinger, G.; Viktorovitch, P.;
(1991)

Photoluminescence (PL) measurements are presented for thin epitaxial layers of InAs, 2.5 Å<d <36 Å, grown on InP(100) by molecular beam epitaxy. The combination of efficient carrier capture and PL redshift with increasing InAs thickness clearly indicate the formation of... View more
  • References (13)
    13 references, page 1 of 2

    - 1.8 0.472 (strained) 0.0325 (strained) 0.35 (strained)

    'G. J. Davies, R. Heckingbottom, H. Ohno, C. E. C. Wood, and A. R. Calawa, Appl. Phys. Lett. 37, 290 (1980).

    2J. M. Moison, M. Bensoussan, and F. Houzay, Phys. Rev. B 34, 2018 (1986).

    'G. Hollinger, D. Gallet, M. Gendry, C. Santinelli, and P. Viktorovitch, J. Vat. Sci. Technol. B 8, 832 ( 1990).

    4P. Viktorovitch, D. Gallet, M. Gendry, G. Hollinger, K. Schohe, T. Benyattou, A. Tabata, D. Regaud, and G. Guillot, Proc. 2nd Int. Conf. on InP and Related Materials, Denver ( 1990).

    'D. I. Westwood, D. A. Woolf, and R. H. Williams, J. Cryst. Growth 98, 782 (1989).

    '0. J. Glembocki and H. Pillar, in Handbook of Optical Constants of Solids, edited by Edward Palik (Academic, London, 1985), pp. 503- 516.

    'W. Seifert, J. 0. Fornell, L. A. Ledebo, M. E. Pistol, and L. A. Samuelson, Appl. Phys. Lett. 56, 1128 (1990).

    sT. Y. Wang and G. B. Stringfellow, J. Appl. Phys. 67, 344 (1990).

    'R. P. Schneider and B. W. Wessels, Appl. Phys. Lett. 57, 1998 (1990).

  • Metrics
Share - Bookmark