Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy

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Sobiesierski, Zbigniew; Clark, S. A.; Williams, R. H.; Tabata, A.; Benyattou, T.; Guillot, G.; Gendry, M.; Hollinger, G.; Viktorovitch, P.;

Photoluminescence (PL) measurements are presented for thin epitaxial layers of InAs, 2.5 Å<d <36 Å, grown on InP(100) by molecular beam epitaxy. The combination of efficient carrier capture and PL redshift with increasing InAs thickness clearly indicate the formation of... View more
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    - 1.8 0.472 (strained) 0.0325 (strained) 0.35 (strained)

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