Ion yields and erosion rates for Si1−xGex(0x1) ultralow energy O2+ secondary ion mass spectrometry in the energy range of 0.25–1 keV

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Morris, R. J. H. (Richard J. H.); Dowsett, M. G.;
(2009)

We report the SIMS parameters required for the quantitative analysis of Si1−xGex across the range of 0 ≤ x ≤ 1 when using low energy O2+ primary ions at normal incidence. These include the silicon and germanium secondary ion yield [i.e., the measured ion signal (ions/s)... View more
  • References (30)
    30 references, page 1 of 3

    1E. Kasper and S. Heim, Appl. Surf. Sci. 224, 3 2004 .

    2M. J. Lee, E. A. Fitzgrald, M. T. Bulsara, M. T. Currie, and A. Lochtefeld, J. Appl. Phys. 97, 011101 2005 .

    3T. E. Whall and E. H. C. Parker, Thin Solid Films 367, 250 2000 .

    4E. Kasper, Appl. Surf. Sci. 254, 6158 2008 .

    5G. Dong, C. Liangzhen, L. Rong, and A. T. S. Wee, Surf. Interface Anal.

    6F. Sánchez-Almazán, E. Napolitani, A. Carnera, A. V. Drigo, M. Berti, J.

    Methods Phys. Res. B 226, 301 2004 .

    7M. G. Dowsett, R. Morris, P.-F. Chou, S. F. Corcoran, H. Kheyrandish, G.

    A. Cooke, J. L. Maul, and S. B. Patel, Appl. Surf. Sci. 203-204, 500 2003 .

    8A. Mikami, T. Okazawa, K. Saito, and Y. Kido, Appl. Surf. Sci. 253, 1620 2006 .

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