Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

Article English OPEN
Wang, T.;
(2016)
  • Publisher: IOP Publishing

The most successful example of large lattice-mismatched epitaxial growth of semiconductors is\ud the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great\ud success in developing InGaN-based blue emitters. However, the majority o... View more
  • References (109)
    109 references, page 1 of 11

    [1] Amano H, Sawaki N, Akasaki I and Toyoda Y 1986 Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer Appl. Phys. Lett. 48 354

    [2] Amano H, Kito M, Hiramatsu K and Akasaki I 1989 P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation Jpn. J. Appl. Phys. 28 L2112

    [3] Nakamura S, Mukai T and Senoh M 1994 Candela-class highbrightness InGaN/AlGaN double-heterostructure blue-lightemitting diodes Appl. Phys. Lett. 64 1687

    [4] Avramescu A, Lermer T, Müller J, Eichler C, Bruederl G, Sabathil M, Lutgen S and Strauβ U 2010 True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN Appl. Phys. Express 3 061003

    [5] Nakamura S, Senoh M, Iwasa N and Nagahama S 1995 Highbrightness InGaN blue, green and yellow light emitting diodes with quantum well structures Jpn. J. Appl. Phys. 34 L797

    [6] Mukai T, Narimatsu H and Nakamura S 1998 Amber InGaN based light-emitting diodes operable at high ambient temperatures Jpn. J. Appl. Phys. 37 L479

    [7] Mukai T, Yamada M and Nakamura S 1999 Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes Jpn. J. Appl. Phys. 38 3976

    [8] Deisseroth K 2011 Optogenetics Nat. Methods 8 26

    [9] Ling S-C, Lu T-C, Chang S-P, Chen J-R, Kuo H-C and Wang S-C 2010 Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes Appl. Phys. Lett. 96 231101

    [10] Kioupakis E, Rinke P, Delaney K T and Van de Walle C G 2011 Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes Appl. Phys. Lett. 98 161107 and references therein

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