Temporary surface passivation for characterisation of bulk defects in silicon : a review

Article English OPEN
Grant, Nicholas E.; Murphy, John D.;
(2017)

Accurate measurements of the bulk minority carrier lifetime in high-quality silicon materials is challenging due to the influence of surface recombination. Conventional surface passivation processes such as thermal oxidation or dielectric deposition often modify the bul... View more
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    Received: July 21, 2017

    Revised: September 10, 2017

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