publication . Article . 2017

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

George T. Nelson; Bor-Chau Juang; Michael A. Slocum; Zachary S. Bittner; Ramesh B. Laghumavarapu; Diana L. Huffaker; Seth M. Hubbard;
Open Access
  • Published: 04 Dec 2017 Journal: Applied Physics Letters, volume 111, page 231,104 (issn: 0003-6951, eissn: 1077-3118, Copyright policy)
  • Publisher: AIP Publishing
  • Country: United Kingdom
Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compar...
free text keywords: Dislocation, Carrier lifetime, Wide-bandgap semiconductor, Optoelectronics, business.industry, business, Suns in alchemy, Molecular beam epitaxy, Solar cell, law.invention, law, Direct and indirect band gaps, Physics, Gallium arsenide, chemistry.chemical_compound, chemistry, Analytical chemistry, QC
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