Hydrogen Interaction with Dislocations in Si

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Ewels, C P; Leoni, S; Heggie, M I; Jemmer, P; Hernandez, E; Jones, R; Briddon, P R;
(2000)

An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H? With the core of the 90 degrees partial dislocation in Si, we have identified a path for ... View more
  • References (37)
    37 references, page 1 of 4

    [1] E. A. Stach, R. Hull, R. M. Tromp, M. C. Reuter, M. Copel, F. K. LeGoues, and J. C. Bean, J. Appl. Phys. 83, 1931 (1998).

    [2] Y. Yamashita, F. Jyobe, Y. Kamiura, and K. Maeda, Phys. Status Solidi (a) 171, 27 (1999).

    [3] H. Alexander, H. R. Kolar, and J. C. H. Spence, Phys. Status Solidi (a) 171, 5 (1999).

    [4] S. Öberg, P. K. Sitch, R. Jones, and M. I. Heggie, Phys. Rev. B 51, 13 138 (1995).

    [5] J. R. K. Bigger, D. A. McInnes, A. P. Sutton, M. C. Payne, I. Stich, R. D. King-Smith, D. M. Bird, and L. J. Clarke, Phys. Rev. Lett. 69, 2224 (1992).

    [6] Y. M. Huang, J. C. H. Spence, and O. F. Sankey, Phys. Rev. Lett. 74, 3392 (1995).

    [7] J. Bennetto, R. W. Nunes, and D. Vanderbilt, Phys. Rev. Lett. 79, 245 (1997).

    [8] V. V. Bulatov, S. Yip, and A. S. Argon, Philos. Mag. A 72, 453 (1995).

    [9] P. B. Hirsch, J. Phys. 40, C6 - C117 (1979); J. Microsc. 118, 3 (1980).

    [10] R. Jones, Philos. Mag. B 42, 365 (1980).

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