Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates

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Parsons, Jonathan ; Morris, R. J. H. ; Leadley, D. R. (David R.) ; Parker, Evan H. C. ; Fulgoni, D. J. F. ; Nash, Lee John (2008)

Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x-ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of... View more
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