Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates

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Parsons, Jonathan; Morris, R. J. H.; Leadley, D. R. (David R.); Parker, Evan H. C.; Fulgoni, D. J. F.; Nash, Lee John;

Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x-ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of... View more
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