Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator

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Paul, Douglas J. (Professor of Semiconductor Devices)‏; Griffin, N.; Arnone, D. D.; Pepper, M.; Emeleus, C. J.; Phillips, P. J. (Peter J.); Whall, Terry E.;
(1996)

Modulation doped pseudomorphic Si0.87Ge0.13 strained quantum wells were grown on bonded silicon-on-insulator (SOI) substrates. Comparison with similar structures grown on bulk Si(100) wafers shows that the SOI material has higher mobility at low temperatures with a maxi... View more
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