Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9) \ud

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Ng, B.K. ; David, J.P.R. ; Rees, G.J. ; Tozer, R.C. ; Hopkinson, M. ; Airey, R.J. (2002)

Measurements carried out on thick Al/sub x/Ga/sub 1-x/As (x < 0.9) diodes showed that the ionization coefficients of Al/sub x/Ga/sub 1-x/As become widely different when x /spl ges/ 0.63 and are virtually independent of x for x /spl ges/ 0.72. A strong dead space effect is also observed in thick Al/sub x/Ga/sub 1-x/As structures with x /spl ges/ 0.6. The breakdown voltage is found to increase at a slower rate with x when x > 0.63.
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