Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9) \ud

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Ng, B.K.; David, J.P.R.; Rees, G.J.; Tozer, R.C.; Hopkinson, M.; Airey, R.J.;

Measurements carried out on thick Al/sub x/Ga/sub 1-x/As (x < 0.9) diodes showed that the ionization coefficients of Al/sub x/Ga/sub 1-x/As become widely different when x /spl ges/ 0.63 and are virtually independent of x for x /spl ges/ 0.72. A strong dead space effect ... View more
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