publication . Conference object . Part of book or chapter of book . 2018

Distributed feedback InGaN/GaN laser diodes

Slight, Thomas J.; Rafailov, Edik U.; Yadav, Amit; Kelly, Anthony E.; Docherty, Kevin E.; Perlin, Piotr; Leszczyński, Mike; Najda, Stephen P.; Grzanka, Szymon; Stanczyk, Szymon; ...
Open Access
  • Published: 23 Feb 2018
  • Publisher: SPIE
  • Country: United Kingdom
We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can intro...
free text keywords: Laser diode, law.invention, law, Optoelectronics, business.industry, business, Distributed feedback laser, Blue laser, Grating, Gallium nitride, chemistry.chemical_compound, chemistry, Semiconductor laser theory, Laser linewidth, Materials science, Laser
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